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| Semiconductor STK001SF N-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features * Low VGS(th) : VGS(th)=0.6~1.2V * Small footprint due to small package * Low RDS (ON) : RDS (ON)= 33m (Typ.) Ordering Information Type NO. STK001SF Marking K01 Package Code SOT-23F Outline Dimensions unit : mm 2.30~2.50 1.50~1.70 1 2.80~3.00 1.90 Typ. 3 Block Diagram 2 0.45 Max. D 0.10 Max. 0.20 Max. 0.80~1.00 G S PIN 1. 2. 3. Connections Gate Source Drain 1 STK001SF Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) ** Drain current (Pulsed) * ** (Ta=25C) Symbol VDSS VGSS ID IDP PD IAS EAS IAR EAR TJ Tstg Rating 20 12 3.2 12.8 0.35 3.2 30 3.2 2.5 150 -55~150 Unit V V A A W A mJ A mJ C Total Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ** Device mounted on a glass-epoxy board Characteristic Thermal resistance Junction-ambient Symbol Rth(J-a) ** Typ. - Max 357 Unit /W 2 STK001SF N-CH Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge (Ta=25C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS=VGS VDS=20V, VGS=0V VDS=0V, VGS=12V VGS=4.5V, ID=1.6A VGS=2.5V, ID=1.6A VDS=5V, ID=3.2A VGS=0V, VDS=10V, f=1MHz Min. 20 0.6 - Typ. 33 46 10.5 395 97 44 3.2 2.8 20 2.8 6.8 0.8 0.9 Max. 1.2 1 10 50 70 10 1.2 1.1 Unit V V A A m m S pF VDD=10V, ID=3.2A RG=10 - ns VDD=10V, VGS=4.5V ID=3.2A - nC Source-Drain Diode Ratings and Characteristics Characteristic Source current Sourcecurrent(Plused) Forward voltage Reverse recovery time Reverse recovery charge (Ta=25C) Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=0.5A Is=3.2A, VDD=10V dIS/dt=70A/us Min - Typ 0.7 24 120 Max 0.5 2.0 1.2 - Unit A V ns uC Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=3.0mH, IAS=3.8A, VDD=10V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature 3 STK001SF N-CH Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS - m Fig. 3 RDS(on) - ID Fig. 4 IS - VSD a Fig. 5 Capacitance - VDS Fig. 6 VGS - QG 4 STK001SF Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ 4.5 1.6 C C Fig. 9 ID - Ta Fig. 10 Safe Operating Area * 5 STK001SF Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform =0 Fig. 13 EAS Test Circuit & Waveform 6 STK001SF Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform 4. 7 STK001SF The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. 8 |
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